Transcend 250H M.2 1TB 2280 PCIe 4.0 3D NAND NVMe Internal SSD TS1TMTE250H

Exhibiting more than just ultra speeds, the MTE250H PCIe SSD delivers unbridled performance, low latency, and high stability for passionate gamers. Built with a PCI Express Gen 4 x4 interface, 3D NAND flash, an 8-channel controller, a DRAM cache, and an aluminum heatsink, the MTE250H PCIe SSD is ready to put excellence in your hand.

Product Features

Full speed ahead

Transcend’s MTE250H PCIe SSD follows the latest NVMe 1.4 standard, supporting the PCIe Gen4 x4 interface, allowing four lanes to transmit and receive data simultaneously. Its 8-channel controller delivers sequential R/W up to 7,500/6,700 MB/s, and up to 540K IOPS, providing captivating performance and response times for your PC systems and game consoles.

Level up with next-gen PCIe 4.0

Transcend’s MTE250H features the new PCIe 4.0 specification, supporting a bandwidth of 16 GT/s per lane as opposed to 8 GT/s per lane for PCIe 3.0. Backward compatible with PCIe 3.0, PCIe 4.0 unleashes higher transfer speeds and guarantees lower system latency. For advanced gamers, this means a more seamless and immersive experience.

Be the coolest

Transcend’s MTE250H features a high-efficiency aluminum heatsink to improve heat dissipation of the high-performance, compact-sized SSD. The high thermal conductivity of aluminum and increased surface area reduce drive temperatures by 15%, allowing the SSD to maintain lower operating temperatures, even when you’re maxing out performance on your desktop PC or game console.

Better endurance, higher reliability

Transcend’s PCIe SSD MTE250H is engineered with LDPC (Low-Density Parity Check) coding–a powerful ECC algorithm–to keep data secure. With its built-in dynamic thermal throttling mechanism, operating temperature is precisely monitored and controlled for the MTE250H, delivering superior endurance and stability for high-end applications.

Technical Specification

• SSD capacity: 1 TB
• Type: M.2 2280
• Bus Interface: NVMe PCIe Gen4 x4
• Flash Type: 3D NAND flash
• Sequential Read/Write: up to 7,200/6,200 MB/s
• 4K Random Read/Write: up to 530,000/420,000 IOPS
• Terabytes Written (TBW): 780 TBW
• Mean Time Between Failures (MTBF): 3,000,000 hours (s)
• Technology: S.M.A.R.T, Advanced Garbage Collection, LDPC Coding, RAID Engine, DRAM Cache
• Component for: PC or Game Consoles (if supported)